Minimizing "Tone Reversal" during 19x nm mask inspection-Reference-Cited by-同舟云学术

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Minimizing "Tone Reversal" during 19x nm mask inspection

Published:2018-06-12 Issue: Volume: Page:
ISSN:
Container-title:Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Seki Kazunori,Badger Karen,Yonetani Masashi,Birnstein Anka,Heumann Jan,Isogawa Takeshi,Konishi Toshio,Kodera Yutaka

Publisher

SPIE

Reference11 articles.

1. Shedding light on EUV inspection;Seki,2012

2. Illuminating EUVL mask defect printability;Badger,2012

3. Impact of EUV photomask line edge roughness on wafer prints;Qi,2012

4. DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm;Naka,2017

5. DUV inspection tool application for beyond optical resolution limit pattern;Inoue,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Capability of DUV inspection for the LWR improved EUV mask of sub-15 nm hp on wafer;Photomask Technology 2019;2019-09-29

2. The study of relationship between defect sensitivity and inspectability on EUV masks with 19x nm mask inspection;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

3. WEREWOLF: sensitivity optimization for early 7 nm EUV masks using an optical 19x nm inspection system;Photomask Technology 2018;2018-10-03

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