Characterizing acid diffusion lengths in chemically amplified resists from measurements of deprotection kinetics-Reference-Cited by-同舟云学术

Characterizing acid diffusion lengths in chemically amplified resists from measurements of deprotection kinetics

Published:2014-12-16 Issue:4 Volume:13 Page:043017
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Patil Abhijit A.¹,Pandey Yogendra Narayan¹,Doxastakis Manolis²,Stein Gila E.¹

Affiliation:

1. University of Houston, Department of Chemical and Biomolecular Engineering, 4800 Calhoun Road, Houston, Texas 77204, United States

2. Institute for Molecular Engineering, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials

2. Experimental method for quantifying acid diffusion in chemically amplified resists

3. Characterization of the Photoacid Diffusion Length and Reaction Kinetics in EUV Photoresists with IR Spectroscopy

4. Improved chemically amplified photoresist characterization using interdigitated electrode sensors: photoacid diffusivity measurements

5. A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists

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4. Probing ion diffusion in chemically amplified resists through experiments and atomistic simulations;Advances in Patterning Materials and Processes XXXVIII;2021-02-22

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