Ion Diffusion in Chemically Amplified Resists
Author:
Affiliation:
1. Department of Chemical and Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
2. Shared Equipment Authority, Rice University, Houston, Texas 77005, United States
Funder
National Science Foundation
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Inorganic Chemistry,Polymers and Plastics,Organic Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.macromol.0c02052
Reference88 articles.
1. Extreme ultraviolet resist materials for sub-7 nm patterning
2. Ito, H. Microlithography: Molecular Imprinting; Springer: Berlin, Heidelberg, 2005; pp 37–245.
3. Ito, H. Rise of Chemical Amplification Resists from Laboratory Curiosity to Paradigm Enabling Moore’s Law. Advances in Resist Materials and Processing Technology XXV, 2008; pp 21–35.
4. Brainard, R. L.; Trefonas, P.; Lammers, J. H.; Cutler, C. A.; Mackevich, J. F.; Trefonas, A.; Robertson, S. A. Shot Noise, LER, and Quantum Efficiency of EUV Photoresists. Emerging Lithographic Technologies VIII, 2004; pp 74–85.
5. Measurements of acid generation by extreme ultraviolet irradiation in lithographic films
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