Coarse-Grained Modeling of EUV Patterning Process Reflecting Photochemical Reactions and Chain Conformations

Author:

Kim Tae-Yi1,Kang In-Hwa2,Park Juhae13,Kim Myungwoong4ORCID,Oh Hye-Keun2,Hur Su-Mi15

Affiliation:

1. Department of Polymer Engineering, Graduate School, Chonnam National University, Gwangju 61186, Republic of Korea

2. Department of Applied Physics, Hanyang University, Ansan 15588, Republic of Korea

3. Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL 60637, USA

4. Department of Chemistry and Chemical Engineering, Inha University, Incheon 22212, Republic of Korea

5. School of Polymer Science and Engineering, Chonnam National University, Gwangju 61186, Republic of Korea

Abstract

Enabling extreme ultraviolet lithography (EUVL) as a viable and efficient sub-10 nm patterning tool requires addressing the critical issue of reducing line edge roughness (LER). Stochastic effects from random and local variability in photon distribution and photochemical reactions have been considered the primary cause of LER. However, polymer chain conformation has recently attracted attention as an additional factor influencing LER, necessitating detailed computational studies with explicit chain representation and photon distribution to overcome the existing approach based on continuum models and random variables. We developed a coarse-grained molecular simulation model for an EUV patterning process to investigate the effect of chain conformation variation and stochastic effects via photon shot noise and acid diffusion on the roughness of the pattern. Our molecular simulation demonstrated that final LER is most sensitive to the variation in photon distributions, while material distributions and acid diffusion rate also impact LER; thus, the intrinsic limit of LER is expected even at extremely suppressed stochastic effects. Furthermore, we proposed and tested a novel approach to improve the roughness by controlling the initial polymer chain orientation.

Funder

Chonnam National University

Samsung Research Funding Center for Samsung Electronics

Ministry of Trade, Industry and Energy

Publisher

MDPI AG

Subject

Polymers and Plastics,General Chemistry

Reference44 articles.

1. Alagna, P., Conley, W., Rechtsteiner, G., Nafus, K., and Biesemans, S. (March, January 28). Image contrast enhancement of multiple patterning features through lower light source bandwidth. Proceedings of the Optical Microlithography XXX, San Jose, CA, USA.

2. Chen, Y., Cheng, Q., and Kang, W. (2012, January 13–16). Technological merits, process complexity, and cost analysis of self-aligned multiple patterning. Proceedings of the Optical Microlithography XXV, San Jose, CA, USA.

3. Miyamoto, H., Furusato, H., Ishida, K., Tsushima, H., Kurosu, A., Tanaka, H., Ohta, T., Bushida, S., Saito, T., and Mizoguchi, H. (March, January 27). Next-generation ArF laser technologies for multiple-patterning immersion lithography supporting leading edge processes. Proceedings of the Optical Microlithography XXXI, San Jose, CA, USA.

4. Ronse, K., De Bisschop, P., Vandenberghe, G., Hendrickx, E., Gronheid, R., Pret, A.V., Mallik, A., Verkest, D., and Steegen, A. (2012, January 10–13). Opportunities and challenges in device scaling by the introduction of EUV lithography. Proceedings of the 2012 International Electron Devices Meeting, San Francisco, CA, USA.

5. Wurm, S. (2014, January 24–25). EUV lithography: Progress, challenges, and outlook. Proceedings of the 30th European Mask and Lithography Conference, Dresden, Germany.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3