Characterization of the Photoacid Diffusion Length and Reaction Kinetics in EUV Photoresists with IR Spectroscopy-Reference-Cited by-同舟云学术

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Characterization of the Photoacid Diffusion Length and Reaction Kinetics in EUV Photoresists with IR Spectroscopy

Published:2010-04-14 Issue:9 Volume:43 Page:4275-4286
ISSN:0024-9297
Container-title:Macromolecules
language:en
Short-container-title:Macromolecules

Author:

Kang Shuhui¹,Wu Wen-li¹,Choi Kwang-Woo¹²,De Silva Anuja³,Ober Christopher K.³,Prabhu Vivek M.¹

Affiliation:

1. Polymers Division, National Institute of Standards and Technology, 100 Bureau Dr, Gaithersburg, Maryland 20899

2. Intel Corporation, Santa Clara, California 95054-1549

3. Cornell University, Materials Science & Engineering, 310 Bard Hall, Ithaca, New York 14853-1501

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Inorganic Chemistry,Polymers and Plastics,Organic Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ma902548a

Reference78 articles.

1. Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance

2. Characterization of line-edge roughness in photoresist using an image fading technique

3. Chemical Amplification Resists for Microlithography

4. Chemical amplification resists: Inception, implementation in device manufacture, and new developments

5. Approaches to the Design of Radiation‐Sensitive Polymeric Imaging Systems with Improved Sensitivity and Resolution

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1. Relationship between Tg of Polyimide Resin and Resist Sensitivity in Three-Component Chemically Amplified Polyimide Resist;Journal of Photopolymer Science and Technology;2024-06-25

2. Radiation chemistry of a novel zinc–oxo cluster crosslinking strategy for EUV patterning;Science China Materials;2024-04-08

3. Dissociative photoionization of phenyl triflate, a photoacid generator for photolithography, at 92 eV;The Journal of Chemical Physics;2024-04-01

4. Machine learning in electron beam lithography to boost photoresist formulation design for high-resolution patterning;Nanoscale;2024

5. Atomistic Modeling Approach for Predicting Association of Photoacid Generators in Extreme Ultraviolet Polymeric Photoresists;Chemistry of Materials;2023-10-31

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