Impact of B4C capping layer for extreme ultraviolet mask on the sensitivity of patterned mask inspection using a projection electron microscope-Reference-Cited by-同舟云学术

Impact of B4C capping layer for extreme ultraviolet mask on the sensitivity of patterned mask inspection using a projection electron microscope

Published:2014-12-11 Issue:4 Volume:13 Page:043015
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Iida Susumu,Hirano Ryoichi,Amano Tsuyoshi,Watanabe Hidehiro

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Development of a new mask pattern inspection tool NPI-7000 and applied results to EUV mask inspection

2. Electron beam inspection system based on the projection imaging electron microscope

3. Performance of EBeyeM for EUV mask inspection

4. Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics

5. Patterned mask inspection technology with projection electron microscope technique on extreme ultraviolet masks

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1. An analysis of the impact of native oxide, surface contamination and material density on total electron yield in the absence of surface charging effects;Applied Surface Science;2016-10

2. Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection;SPIE Proceedings;2016-03-24

3. Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-22

4. Pattern inspection of etched multilayer extreme ultraviolet mask;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-01-29

5. Simulation technique for pattern inspection using a projection electron microscope;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-11