Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics-Reference-Cited by-同舟云学术

Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics

Published:2013-02-28 Issue:2 Volume:12 Page:021003
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Hirano Ryoichi,Watanabe Hidehiro,Iida Susumu,Amano Tsuyoshi,Terasawa Tsuneo,Hatakeyama Masahiro,Murakami Takeshi

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-06-24

2. Recent results from extreme ultraviolet lithography patterned mask inspection for 11 nm half-pitch generation using projection electron microscope system;SPIE Proceedings;2016-05-10

3. Identification of multilayer structures using secondary electron yield curves: effect of native oxide films on EUV-patterned mask inspection;SPIE Proceedings;2016-03-24

4. Investigation of defect detectability for extreme ultraviolet patterned mask using two types of high-throughput electron-beam inspection systems;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-03-22

5. Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation;Extreme Ultraviolet (EUV) Lithography VII;2016-03-18