Relaxing LER requirement in EUV lithography
Author:
Publisher
SPIE
Reference23 articles.
1. Relationship between Stochastic Effect and Line Edge Roughness in Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Monte Carlo Simulation
2. Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist
3. Modeling and Simulation of Line Edge Roughness for EUV Resists
4. Statistical Timing Analysis Considering Device and Interconnect Variability for BEOL Requirements in the 5-nm Node and Beyond
5. Analysis of yield loss due to random photolithographic defects in the interconnect structure of FPGAs.;Campregher,2005
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1. In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization;Journal of Vacuum Science & Technology B;2022-03
2. Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-06-17
3. Characterization of Surface Variation of Chemically Amplified Photoresist to Evaluate Extreme Ultraviolet Lithography Stochastics Effects;Journal of Photopolymer Science and Technology;2021-06-11
4. Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23
5. Design Impacts of Back-End-of-Line Line Edge Roughness;IEEE Transactions on Semiconductor Manufacturing;2020-02
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