In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization
Author:
Affiliation:
1. TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, New York 12203
2. IBM Research Albany, 257 Fuller Road, Albany, New York 12203
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001671
Reference22 articles.
1. The road towards aggressive pitch scaling with single exposure EUV
2. Self-aligned blocking integration demonstration for critical sub-30-nm pitch Mx level patterning with EUV self-aligned double patterning
3. Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning
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