Self-aligned blocking integration demonstration for critical sub-30-nm pitch Mx level patterning with EUV self-aligned double patterning-Reference-Cited by-同舟云学术

Self-aligned blocking integration demonstration for critical sub-30-nm pitch Mx level patterning with EUV self-aligned double patterning

Published:2018-07-31 Issue:01 Volume:18 Page:1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Raley Angélique¹,Lee Joe²,Smith Jeffrey T.¹,Sun Xinghua¹,Farrell Richard A.¹,Shearer Jeffrey²,Xu Yongan²,Ko Akiteru¹,Metz Andrew W.¹,Biolsi Peter¹,Devilliers Anton¹,Arnold John²,Felix Nelson²

Affiliation:

1. Tokyo Electron Limited, Albany, New York

2. IBM Research, Semiconductor Technology Research, Albany, New York

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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