Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique
Author:
Affiliation:
1. TEL Technology Center, America, LLC, Albany, New York
2. State University of New York Polytechnic Institute, College of Nanoscale Science and Engineering, Al
Publisher
SPIE-Intl Soc Optical Eng
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of the change in photoresist sidewall roughness due to electron beam-induced shrinkage using atomic force microscopy;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-12-07
2. Photoresist shrinkage observation by a metrological tilting-AFM;Metrology, Inspection, and Process Control XXXVII;2023-04-27
3. Enhancing the precision of 3D sidewall measurements of photoresist using atomic force microscopy with a tip-tilting technique;Journal of Applied Physics;2023-02-09
4. Unbiased line edge roughness measurement using profile-averaging method for precise roughness parameters measurement;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-30
5. In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization;Journal of Vacuum Science & Technology B;2022-03
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