Demonstration of an effective mask proximity correction for advanced photomask-Reference-Cited by-同舟云学术

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Demonstration of an effective mask proximity correction for advanced photomask

Published:2018-06-12 Issue: Volume: Page:
ISSN:
Container-title:Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Schiavone Patrick,Kono Kenji,Kon Yasuo,Tsukino Yasunari,Postnikov Sergei,Figueiro Thiago,Martin Luc,Petroni Paolo

Publisher

SPIE

Reference6 articles.

1. Proximity correction for electron beam lithography using a three-Gaussian model of the electron energy distribution

2. Proximity effect in electron‐beam lithography

3. High-Accuracy Proximity Effect Correction for Mask Writing

4. A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

5. ITRS Roadmap, 2011.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The rise of contour metrology from niche solution to versatile enabler;Metrology, Inspection, and Process Control XXXVII;2023-04-27

2. Contour based metrology: “make measurable what is not so";Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-03-27

3. Mask process correction for optical weak pattern improvement;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27

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