Proximity correction for electron beam lithography using a three-Gaussian model of the electron energy distribution-Reference-Cited by-同舟云学术

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Proximity correction for electron beam lithography using a three-Gaussian model of the electron energy distribution

Published:1989-11 Issue:6 Volume:7 Page:1507
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wind S. J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 76 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Feature Point-Based Proximity Effect Correction of Patterns;2023 International Workshop on Advanced Patterning Solutions (IWAPS);2023-10-26

2. Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography;Microelectronics Journal;2023-03

3. Efficient Proximity Effect Correction Using Fast Multipole Method With Unequally Spaced Grid for Electron Beam Lithography;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-01

4. Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Distributed Parallel Computing;2022 International Workshop on Advanced Patterning Solutions (IWAPS);2022-10-21

5. Low-voltage electron scattering in advanced extreme ultraviolet masks;Japanese Journal of Applied Physics;2022-08-01

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