Author:
Tsai Hsinyu,Miyazoe Hiroyuki,Vora Ankit,Magbitang Teddie,Arellano Noel,Liu Chi-Chun,Maher Michael J.,Durand William J.,Dawes Simon J.,Bucchignano James J.,Gignac Lynne,Sanders Daniel P.,Joseph Eric A.,Colburn Matthew E.,Willson C. Grant,Ellison Christopher J.,Guillorn Michael A.
Reference5 articles.
1. FinFET performance advantage at 22nm: An AC perspective.;Guillorn,2008
2. Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication
3. Self-aligned line-space pattern customization with directed self-assembly graphoepitaxy at 24nm pitch.;Tsai,2015
4. Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST
5. Plasma Etching of Directed Self Assembly based Patterns for Aggressively Scaled CMOS Applications.;Miyazoe,2015
Cited by
16 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献