Influence of Additives on the Interfacial Width and Line Edge Roughness in Block Copolymer Lithography-Reference-Cited by-同舟云学术

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Influence of Additives on the Interfacial Width and Line Edge Roughness in Block Copolymer Lithography

Published:2020-02-25 Issue:6 Volume:32 Page:2399-2407
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Sunday Daniel F.¹^ORCID,Chen Xuanxuan²,Albrecht Thomas R.³,Nowak Derek³,Rincon Delgadillo Paulina⁴,Dazai Takahiro⁵,Miyagi Ken⁵,Maehashi Takaya⁵,Yamazaki Akiyoshi⁵,Nealey Paul F.²^ORCID,Kline R. Joseph¹

Affiliation:

1. Materials Science and Engineering Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899, United States

2. Institute for Molecular Engineering, University of Chicago, 5801 S Ellis Avenue, Chicago, Illinois 60637, United States

3. Molecular Vista, San Jose, California 95119, United States

4. IMEC, Kapeldreef 75, Leuven B-3001, Belgium

5. Tokyo Ohka Kogyo, 1590 Tabata, Samukawa-Machi, Koza-Gun, Kanagawa 253-0114, Japan

Funder

National Institute of Standards and Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.9b04833

Reference76 articles.

1. Raley, A.; Mack, C. A.; Liu, E.; Thibaut, S.; Ko, A. Benchmarking of EUV Lithography Line/Space Patterning versus Immersion Lithography Multipatterning Schemes at Equivalent Pitch. In International Conference on Extreme Ultraviolet Lithography 2018; Ronse, K. G., Gargini, P. A., Hendrickx, E., Naulleau, P. P., Itani, T., Eds. SPIE: Monterey, United States, 2018; p 1080915.

2. van Veenhuizen, M.; Allen, G.; Harmes, M.; Indukuri, T.; Jezewski, C.; Krist, B.; Lang, H.; Myers, A.; Schenker, R.; Singh, K. J. Demonstration of an Electrically Functional 34 Nm Metal Pitch Interconnect in Ultralow-k ILD Using Spacer-Based Pitch Quartering. In Proceeding IEEE; IEEE: San Jose, California, USA, 2012; pp 1–3.

3. Kono, T.; Hatano, M.; Tokue, H.; Kato, H.; Fukuhara, K.; Nakasugi, T. Half-Pitch 14nm Direct Patterning with Nanoimprint Lithography. In Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019; Panning, E. M., Sanchez, M. I., Eds. SPIE: San Jose, United States, 2019; p 10958OH.

4. Epitaxial self-assembly of block copolymers on lithographically defined nanopatterned substrates

5. Directed Assembly of Block Copolymer Blends into Nonregular Device-Oriented Structures

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