Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication-Reference-Cited by-同舟云学术

Two-Dimensional Pattern Formation Using Graphoepitaxy of PS-b-PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

Published:2014-04-11 Issue:5 Volume:8 Page:5227-5232
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tsai Hsinyu¹,Pitera Jed W.²,Miyazoe Hiroyuki¹,Bangsaruntip Sarunya¹,Engelmann Sebastian U.¹,Liu Chi-Chun³,Cheng Joy Y.²,Bucchignano James J.¹,Klaus David P.¹,Joseph Eric A.¹,Sanders Daniel P.²,Colburn Matthew E.³,Guillorn Michael A.¹

Affiliation:

1. IBM Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States

2. IBM Research Almaden, 650 Harry Road, San Jose, California 95120, United States

3. IBM Albany Nanotech Research Center, 257 Fuller Road, Albany, New York 12203, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn501300b

Reference17 articles.

1. Model ABC Triblock Copolymers and Blends near the Order−Disorder Transition

2. High-Aspect-Ratio Perpendicular Orientation of PS-b-PDMS Thin Films under Solvent Annealing

3. Self-aligned self assembly of multi-nanowire silicon field effect transistors

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