Self-aligned self assembly of multi-nanowire silicon field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2112191
Reference12 articles.
1. Silicon Device Scaling to the Sub-10-nm Regime
2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
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