New high repeatability wafer geometry measurement technique for full 200mm and 300mm blank wafers-Reference-Cited by-同舟云学术

New high repeatability wafer geometry measurement technique for full 200mm and 300mm blank wafers

Published:2022-03-05 Issue: Volume: Page:
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Container-title:Photonic Instrumentation Engineering IX
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Author:

Trujillo-Sevilla Juan M.,Pérez-García Álvaro,Casanova-González Óscar,Velasco-Ocaña Miriam,Ceruso Sabato,Oliva-García Ricardo,Gómez-Cárdenes Óscar,Martín-Hernández Javier,Roqué-Velasco Alex,Rodríguez-Ramos José Manuel,Gaudestad Jan O.

Publisher

SPIE

Reference14 articles.

1. Role Of Process-induced Wafer Geometry Changes In Advanced Semiconductor Manufacturing;Turner,2014

2. Improvement of depth of focus control using wafer geometry

3. Full Wafer Stress Metrology for Dielectric Film Characterization: Use Case;Brouzet,2019

4. SPIE Advanced Lithography Conference 2017, “Wafer-shape based in-plane distortion predictions using superfast 4G metrology”, February 2017, San Jose, CA, USA, Leon van Dijk, Jeffrey Mileham, Ilja Malakhovsky, David Laidler, Harold Dekkers,

5. Determining local residual stresses from high resolution wafer geometry measurements

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