Characterization of wafer geometry and overlay error on silicon wafers with nonuniform stress-Reference-Cited by-同舟云学术

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Characterization of wafer geometry and overlay error on silicon wafers with nonuniform stress

Published:2013-10-25 Issue:4 Volume:12 Page:043002
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Brunner Timothy A.,Menon Vinayan C.,Wong Cheuk Wun,Gluschenkov Oleg,Belyansky Michael P.,Felix Nelson M.,Ausschnitt Christopher P.,Vukkadala Pradeep,Veeraraghavan Sathish,Sinha Jaydeep K.

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device overlay root cause process detection using patterned wafer geometry information;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

2. New wave front phase sensor used for 3D shape measurements of patterned silicon wafers;38th European Mask and Lithography Conference (EMLC 2023);2023-10-05

3. A Hierarchical Expected Improvement Method for Bayesian Optimization;Journal of the American Statistical Association;2023-06-23

4. A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. Overlay Control in HAR device integration;2023 IEEE International Memory Workshop (IMW);2023-05

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