A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage-Reference-Cited by-同舟云学术

A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Iacovo Serena¹,D'havé Koen¹,Okudur Oguzhan Orkut¹,De Vos Joeri¹,Uhrmann Thomas²,Plach Thomas²,Conard Thierry¹,Meersschaut Johan¹,Bex Pieter¹,Brems Steven¹,Phommahaxay Alain¹,Gonzalez Mario¹,Witters Liesbeth¹,Beyer Gerald¹,Beyne Eric¹

Affiliation:

1. IMEC,Belgium

2. EVG,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195365.pdf?arnumber=10195365

Reference13 articles.

1. (Invited) High Accuracy Aligned Wafer Bonding for Wafer-Level Integration

2. Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding

3. Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

4. Direct Bonding Using Low Temperature SiCN Dielectrics

5. Fabrication and Study on Red Light Micro-LED Displays

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3. Investigation of Distortion in Wafer-to-wafer Bonding with Highly Bowed Wafers;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Methodologies for Characterization of W2W Bonding Strength;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

5. State of the Art of Cu–Cu Hybrid Bonding;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-03