InGaAs/GaAsSb type-II quantum-well focal plane array with cutoff-wavelength of 2.5 μm
Author:
Affiliation:
1. Sumitomo Electric Industries, Ltd. (Japan)
Publisher
SPIE
Reference16 articles.
1. Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy
2. Infrared detectors: status and trends
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4. Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$m
5. Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5multiple quantum well photodiode
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1. High-Performance InP-Based Bias-Tunable Near-Infrared/Extended-Short Wave Infrared Dual-Band Photodetectors;Journal of Lightwave Technology;2022-08-01
2. InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice;IEEE Electron Device Letters;2022-05
3. Extended-short-wavelength infrared AlInAsSb and InPAsSb detectors on InAs;Infrared Technology and Applications XLVII;2021-04-12
4. Deep levels analysis in wavelength extended InGaAsBi photodetector;Semiconductor Science and Technology;2019-08-28
5. Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes;Optics Express;2018-06-04
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