InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice-Reference-Cited by-同舟云学术

InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

Published:2022-05 Issue:5 Volume:43 Page:757-760
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Jingyi¹^ORCID,Xie Zhiyang¹^ORCID,Zhu Liqi¹^ORCID,Zou Xinbo¹^ORCID,Zhao Xuyi²^ORCID,Yu Wenfu²,Liu Ruotao²,Du Antian²,Gong Qian²,Chen Baile¹^ORCID

Affiliation:

1. School of Information Science and Technology, Shanghaitech University, Shanghai, China

2. Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9762988/09741712.pdf?arnumber=9741712

Reference18 articles.

1. High-performance extended SWIR photodetectors using strain compensated InGaAs/GaAsSb type-II quantum wells

2. InGaAs/GaAsSb Type-II Superlattices for Short-Wavelength Infrared Detection

3. Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

4. InGaAs/GaAsSb type-II quantum-well focal plane array with cutoff-wavelength of 2.5 $\mu$ m;kawahara;Proc SPIE,2017

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