Wide wavelength and low dark current lattice‐mismatched InGaAs/InAsP photodiodes grown by metalorganic vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110860
Reference20 articles.
1. Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodes
2. Ga1−yInyAs/InAsxP1−x (y > 0.53, x > 0) pin photodiodes for long wavelength regions (λ > 2μm) grown by hydride vapour phase epitaxy
3. 2.6 μm InGaAs photodiodes
4. Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x<0.53 for response to longer wavelengths (<1.7 mu m)
5. High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
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