High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19860826?crawler=true&mimetype=application/pdf
Reference3 articles.
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier scattering and relaxation dynamics in n-type In0.83Ga0.17As as a function of temperature and doping density;Journal of Materials Chemistry C;2015
2. Distinction investigation of InGaAs photodetectors cutoff at 2.9μm;Infrared Physics & Technology;2010-05
3. Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination;Infrared Physics & Technology;2009-01
4. Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer;Semiconductor Science and Technology;2008-11-07
5. Wavelength extended 2.4μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations;Infrared Physics & Technology;2008-03
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