Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5multiple quantum well photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4740275
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1. Infrared detectors: status and trends
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5. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
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