Affiliation:
1. School of Electronic Science and Engineering Nanjing University
2. Chinese Academy of Sciences
3. Minzu University of China
Abstract
A bias-selectable near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band bandgap engineered Ga0.51As0.49Sb/Al0.85Ga0.15AsSb/T2SL (In0.53Ga0.47 As/Ga0.51As0.49Sb) infrared photodetector, vertically stacked in a monolithic grown on InP substrate, is demonstrated. GaAsSb NIR sub-detector and T2SL eSWIR sub-detector are operated under small forward and reverse bias, respectively. The GaAsSb sub-detector functions within the NIR spectrum, with a 100% cutoff wavelength of 1.72 μm at 50 mV, achieving a peak responsivity of 0.560 A/W at 1.55 μm and a specific detectivity (D*) of 1.48 ×1011cm⋅Hz1/2/W. At -250 mV, the T2SL eSWIR sub-detector functions in the eSWIR band, exhibiting a 100% cutoff wavelength of 2.6 μm. The peak responsivity is 0.273 A/W at 2.0 μm, with a specific detectivity of 6.11 ×109cm⋅Hz1/2/W. The present work demonstrates the potential of the dual-band photodetector for multispectral SWIR applications.
Funder
National Science Foundations of China
Key Technologies Research and Development Program
Strategic Priority ResearchProgram of the Chinese Academy of Sciences
Research Foundation for Advanced Talents of the Chinese Academy of Sciences
State Key Laboratory of Special Rare Metal Materials, Northwest Rare Metal Materials Research Institute