Reduction of residual stress in optical silicon nitcide thin films prepared by radio-frequency ion beam sputtering deposition
Author:
Publisher
SPIE-Intl Soc Optical Eng
Subject
General Engineering,Atomic and Molecular Physics, and Optics
Reference27 articles.
1. Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering
2. Growth and characterization of silicon nitride films for optoelectronics applications
3. Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films
4. A new fabrication method for low stress PECVD - SiNxlayers
5. Interference coatings based on synthesized silicon nitride
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-dielectric-constant silicon nitride thin films fabricated by radio frequency sputtering in Ar and Ar/N2 gas mixture;Thin Solid Films;2020-09
2. Reduction of residual stress in polymorphous silicon germanium films and their evaluation in microbolometers;The European Physical Journal Applied Physics;2020-03
3. Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique;Applied Optics;2014-01-24
4. Thermal expansion coefficient and thermomechanical properties of SiNx thin films prepared by plasma-enhanced chemical vapor deposition;Applied Optics;2012-10-15
5. Thermal expansion coefficients of obliquely deposited MgF_2 thin films and their intrinsic stress;Applied Optics;2010-12-02
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