Line profile measurement of advanced-FinFET features by reference metrology

Author:

Takamasu Kiyoshi,Iwaki Yuuki,Takahashi Satoru,Kawada Hiroki,Ikota Masami,Yamaguchi Atsuko,Lorusso Gian F.,Horiguchi Naoto

Publisher

SPIE

Reference16 articles.

1. Novel CD-SEM calibration reference patterned by EB cell projection lithography;Nakayama,2005

2. Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology

3. A simulation study of repeatability and bias in the CD-SEM;Villarrubia,2003

4. Novel CD-SEM calibration reference consisting of 100-nm pitch grating and positional identification mark;Nakayama,2007

5. Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect;Abe,2007

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1. The improvement of measurement accuracy of SADP pitch walking issue;Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-03-20

2. Linewidth and roughness measurement of SAOP by using FIB and Planer-TEM as reference metrology;Metrology, Inspection, and Process Control for Microlithography XXXIII;2019-03-26

3. Linewidth roughness of advanced semiconductor features using focused ion beam and planar-transmission electron microscope as reference metrology;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-09-08

4. Asymmetric line edge roughness of multilayer grating reference materials;AIP Advances;2018-03

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