Linewidth roughness of advanced semiconductor features using focused ion beam and planar-transmission electron microscope as reference metrology-Reference-Cited by-同舟云学术

Linewidth roughness of advanced semiconductor features using focused ion beam and planar-transmission electron microscope as reference metrology

Published:2018-09-08 Issue:04 Volume:17 Page:1
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Takamasu Kiyoshi¹,Takahashi Satoru¹,Kawada Hiroki²,Ikota Masami²

Affiliation:

1. University of Tokyo, Department of Precision Engineering, Tokyo

2. Hitachi High-Technologies Corp., Hitachinaka-shi

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Novel CD-SEM calibration reference patterned by EB cell projection lithography

2. Impact of Long-Period Line-Edge Roughness (LER) on Accuracy in Critical Dimension (CD) Measurement and New Guideline for CD Metrology

3. Simulation study of repeatability and bias in the CD-SEM

4. Development and characterisation of a new line width reference material

5. Bias-free measurement of LER/LWR with low damage by CD-SEM

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