Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si
Author:
Affiliation:
1. Chinese Academy of Sciences, Suzhou Institute of Nano-Tech and Nano-Bionics, Key Laboratory of Nanod
2. Lattice Power (Changzhou) Corporation, Changzhou
Publisher
SPIE-Intl Soc Optical Eng
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Advances in group III-nitride-based deep UV light-emitting diode technology
2. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)
3. Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)
4. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor;Applied Physics Letters;2021-08-09
2. III-nitride semiconductor lasers grown on Si;Progress in Quantum Electronics;2021-05
3. Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach;Applied Physics Letters;2020-12-28
4. Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN;Solid-State Electronics;2020-09
5. AlGaN-based Schottky barrier deep ultraviolet photodetector grown on Si substrate;Optics Express;2020-05-26
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3