Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor-Reference-Cited by-同舟云学术

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Published:2021-08-09 Issue:6 Volume:119 Page:063501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xin¹²³^ORCID,Zhong Yaozong¹⁴^ORCID,Zhou Yu¹⁴^ORCID,Su Shuai¹,Yan Shumeng¹,Guo Xiaolu¹^ORCID,Gao Hongwei¹⁴,Zhan Xiaoning¹⁴,Ouyang Sihua⁵,Zhang Zihui²³,Bi Wengang²³^ORCID,Sun Qian¹⁴^ORCID,Yang Hui¹

Affiliation:

1. Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China

2. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, People's Republic of China

3. Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, People's Republic of China

4. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Foshan 528000, People's Republic of China

5. Focus Microwaves Company, Limited, Beijing 10010, People's Republic of China

Funder

Key-Area R&D Program of Guangdong Province

Strategic Priority Research Program of CAS

Key Research Program of Frontier Science, Chinese Academy of Sciences

National Natural Science Foundation of China

Jiangsu Provincial Key Research and Development Program

Natural Science Foundation of Jiangsu Province

Suzhou Science and Technology Program

Publisher

AIP Publishing