Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode-Reference-Cited by-同舟云学术

Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode

Published:2024-04 Issue:4 Volume:71 Page:2355-2360
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Haodong¹^ORCID,Gao Hongwei¹,Chen Xin¹^ORCID,Zhong Yaozong¹^ORCID,Zhan Xiaoning¹,Cao Yunzhe¹,Li Fangqing¹,Guo Xiaolu¹^ORCID,Ge Xinchen¹,Zhi Gaofei¹,Feng Meixin¹^ORCID,Zhang Shuming¹,Sun Qian¹^ORCID,Yang Hui¹

Affiliation:

1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, China

Funder

National Key Research and Development Program of China

Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

Key Research Program of Frontier Sciences, CAS

Bureau of International Cooperation, CAS

Türkiye Bilimsel ve Teknolojik Araştırma Kurumu

CAS Bilateral Cooperation Program

Youth Promotion Association of CAS

Key Research and Development Program of Jiangsu Province

Natural Science Foundation of Jiangsu Province

Science and Technology Program of Suzhou

Guangdong Province \text{Key-Area

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10440008.pdf?arnumber=10440008

Reference30 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Application specific trade-offs for WBG SiC, GaN and high and Si power switch technologies;Rupp;IEDM Tech. Dig.,2014

3. Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

4. Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

5. Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

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