Patterned wafer geometry (PWG) metrology for improving process-induced overlay and focus problems

Author:

Brunner Timothy A.,Zhou Yue,Wong Cheuk W.,Morgenfeld Bradley,Leino Gerald,Mahajan Sunit

Publisher

SPIE

Reference19 articles.

1. Toward 3nm overlay and critical dimension uniformity: an integrated error budget for double patterning lithography;Arnold,2008

2. Holistic optimization architecture enabling sub-14-nm projection lithography

3. Focus and dose characterization of immersion photoclusters;Brunner,2009

4. Overlay characterization and matching of immersion photoclusters;Minghetti,2010

5. Optical lithography with and without NGL for single-digit nanometer nodes;Lin,2015

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2. Investigation of device overlay variation and control metrology in 3D-NAND process;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. New wave front phase sensor used for 3D shape measurements of patterned silicon wafers;International Conference on Extreme Ultraviolet Lithography 2022;2022-12-01

4. A novel hybrid resampling for semiconductor wafer defect bin classification;Quality and Reliability Engineering International;2022-10-17

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