3D Shape Measurements of Patterned Silicon Wafers-Reference-Cited by-同舟云学术

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3D Shape Measurements of Patterned Silicon Wafers

Published:2024-05-13 Issue: Volume:1205303 Page:01-06
ISSN:
Container-title:2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
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Author:

Gaudestad Jan O.¹,Jiménez Miguel²,Kurtev Kiril Ivanov²,Trujillo-Sevilla Juan M.²,Luis Guillermo Castro²,Ramos-Rodríguez Jose Manuel²

Affiliation:

1. Wooptix S.L. USA San Francisco,California,USA

2. Wooptix S.L. Canary Island La Laguna,Tenerife,Spain

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545453.pdf?arnumber=10545453

Reference20 articles.

1. Excursion detection and root-cause analysis using virtual overlay metrology

2. Wafer-shape based in-plane distortion predictions using Superfast 4G metrology

3. Intra-field stress impact on global wafer deformation

4. CHARACTERIZATION OF STRESS AND TOPOLOGY IN WLP PROCESSES USING CGS INTERFEROMETRY;Owen,2014

5. Characterization and mitigation of overlay error on silicon wafers with nonuniform stress

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