Study of CD variation caused by the black border effect and out-of-band radiation in extreme ultraviolet lithography-Reference-Cited by-同舟云学术

Study of CD variation caused by the black border effect and out-of-band radiation in extreme ultraviolet lithography

Published:2014-05-07 Issue:2 Volume:13 Page:023005
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Gao Weimin¹,Niroomand Ardavan²,Lorusso Gian F.³,Boone Robert⁴,Lucas Kevin⁴,Demmerle Wolfgang⁵

Affiliation:

1. Synopsys Inc., Interleuvenlaan 15A, B-3001 Leuven, BelgiumbIMEC, Kapeldreef 75, B-3001 Leuven, Belgium

2. IMEC, Kapeldreef 75, B-3001 Leuven, BelgiumcMicron Technology, Inc., 8000 S. Federal Way, P.O. Box 6, Boise, Idaho 83707-0006

3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

4. Synopsys Inc., 1301 South Mopac Expressway, Austin, Texas 78746

5. Synopsys GmbH, Karl-Hammerschmidt-Strasse 34, 85609 Munich, Germany

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Black border with etched multilayer on EUV mask

2. Impact of an etched EUV mask black border on imaging and overlay;Davydova,2012

3. Imaging performance improvements by EUV mask stack optimization

4. Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issues

5. Light-shield border impact on the printability of extreme-ultraviolet mask

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1. Integrated approach to improving local CD uniformity in EUV patterning;SPIE Proceedings;2017-03-24

2. Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07

3. Understanding of Out-of-Band DUV light in EUV lithography: controlling impact on imaging and mitigation strategies;SPIE Proceedings;2015-09-04

4. Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond;SPIE Proceedings;2014-10-17

5. EUV mask black border evolution;SPIE Proceedings;2014-10-08