Integrated approach to improving local CD uniformity in EUV patterning-Reference-Cited by-同舟云学术

Integrated approach to improving local CD uniformity in EUV patterning

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Liang Andrew¹,Hermans Jan²,Tran Timothy¹,Viatkina Katja³,Liang Chen-Wei¹,Ward Brandon¹,Chuang Steven¹,Yu Jengyi¹,Harm Greg¹,Vandereyken Jelle²,Rio David³,Kubis Michael³,Tan Samantha¹,Wise Rich¹,Dusa Mircea³,Reddy Sirish¹,Singhal Akhil¹,van Schravendijk Bart¹,Dixit Girish¹,Shamma Nader¹

Affiliation:

1. Lam Research Corp. (United States)

2. IMEC (Belgium)

3. ASML Netherlands B.V. (Netherlands)

Publisher

SPIE

Reference20 articles.

1. EUV: Cost Killer Or Savior?;Derbyshire,2015

2. Resist Sensitivity, Source Power, And EUV Throughput;Derbyshire,2015

3. EUV progress toward HVM readiness;Turkot,2016

4. Resolution, LER, and Sensitivity Limitations of Photoresist;Gallatin,2007

5. Tennant’s Law;Mack,2017

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