OCD enhanced: implementation and validation of spectral interferometry for nanosheet inner spacer indentation-Reference-Cited by-同舟云学术

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OCD enhanced: implementation and validation of spectral interferometry for nanosheet inner spacer indentation

Published:2021-03-05 Issue: Volume: Page:
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Container-title:Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
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Author:

Schmidt Daniel,Durfee Curtis,Pancharatnam Shanti,Medikonda Manasa,Greene Andrew,Frougier Julien,Cepler Aron,Belkin Gilad,Shafir Dror,Koret Roy,Shtainman Roy,Turovets Igor,Wolfling Shay

Publisher

SPIE

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectral interferometry for TSV metrology in chiplet technology;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

2. On-cell thickness monitoring of chalcogenide alloy layer using spectral interferometry, Raman spectroscopy, and hybrid machine learning;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

3. Model-free measurement of lateral recess in gate-all-around transistors with micro hard-X-ray fluorescence;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-08-02

4. Process Control Challenges and Solutions for Advanced Semiconductor Devices;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Second harmonic generation and simplified bond hyperpolarizability model analyses on the intermixing of Si/SiGe stacked multilayers for gate-all-around structure;Nanotechnology;2023-01-25

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