On-cell thickness monitoring of chalcogenide alloy layer using spectral interferometry, Raman spectroscopy, and hybrid machine learning-Reference-Cited by-同舟云学术

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On-cell thickness monitoring of chalcogenide alloy layer using spectral interferometry, Raman spectroscopy, and hybrid machine learning

Published:2024-04-10 Issue: Volume: Page:14
ISSN:
Container-title:Metrology, Inspection, and Process Control XXXVIII
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Author:

Ryoo Hyunwoo,Song Seul Ji,Jeon Min Ji,Moon Juhyun,Lee JiHye,Hwang ByungHyun,Ahn Jengho,Song Yoon-jong,Kwak Hidong,Neeman Lior,Meir Noga,Jang Jaehong,Kim Ik Hwan,Kim Hyunkyu

Publisher

SPIE

Reference8 articles.

1. Te-based chalcogenide materials for selector applications

2. A unified model of nucleation switching

3. OCD enhanced: implementation and validation of spectral interferometry for nanosheet inner spacer indentation

4. Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy

5. Raman-active modes ofa−GeSe2anda−GeS2:A first-principles study

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