Limitations of resist-based characterization of EUV mask surface roughness
Author:
Affiliation:
1. Univ. of California, Berkeley (United States)
2. Lawrence Berkeley National Lab. (United States)
Publisher
SPIE
Reference10 articles.
1. Effects of mask roughness and condenser scattering in EUVL systems;Beaudry,1999
2. Relevance of mask-roughness-induced printed line-edge roughness in recent and future extreme-ultraviolet lithography tests
3. Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography
4. Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications;Naulleau,2009
5. EUV masks under exposure: practical considerations;Gallagher,2011
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1. Evaluation of EUV mask impacts on wafer line-width roughness using aerial and SEM image analyses;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-09-17
2. Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses (Conference Presentation);Extreme Ultraviolet (EUV) Lithography IX;2018-03-27
3. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-11
4. Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement;SPIE Proceedings;2015-03-16
5. Effect of amplitude roughness on EUV mask specifications;SPIE Proceedings;2014-10-08
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