Using mesoscale simulation to explore photoresist line edge roughness-Reference-Cited by-同舟云学术

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Using mesoscale simulation to explore photoresist line edge roughness

Published:2005-05-04 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Meiring Jason E.,Michaelson Timothy B.,Jamieson Andrew T.,Schmid Gerard M.,Willson Carlton G.

Publisher

SPIE

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula;Extreme Ultraviolet (EUV) Lithography XI;2020-03-23

2. Resist Filling Study for UV Nanoimprint Lithography Using Stamps with Various Micro/Nano Ratios;Micromachines;2018-07-02

3. Healing surface roughness of lithographic nanopatterns through sub-10 nm aqueous-dispersible polymeric particles with excellent dry etch durability;Molecular Systems Design & Engineering;2018

4. Mesoscale modeling: a study of particle generation and line-edge roughness;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-03-12

5. Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11

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