Ambipolar SnOx thin-film transistors achieved at high sputtering power-Reference-Cited by-同舟云学术

Ambipolar SnOx thin-film transistors achieved at high sputtering power

Published:2018-04-30 Issue:18 Volume:112 Page:182102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Yunpeng¹^ORCID,Yang Jia¹,Qu Yunxiu¹^ORCID,Zhang Jiawei²^ORCID,Zhou Li¹,Yang Zaixing¹,Lin Zhaojun¹^ORCID,Wang Qingpu¹,Song Aimin¹²^ORCID,Xin Qian¹^ORCID

Affiliation:

1. Center of Nanoelectronics, State Key Laboratory of Crystal Materials, and School of Microelectronics, Shandong University, Jinan 250100, China

2. School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

Fundamental Research Fund of Shandong University

Key Research and Development Program of Shandong Province

National Key Research and Development Program of Chiina

National Key Research and Development Program of China

Suzhou Planning Projects of Science and Technology

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022875

Reference27 articles.

1. Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

2. Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Flexible indium–gallium–zinc–oxide Schottky diode operating beyond 2.45 GHz

5. Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

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