Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors-Reference-Cited by-同舟云学术

Competitive device performance of low-temperature and all-solution-processed metal-oxide thin-film transistors

Published:2011-12-12 Issue:24 Volume:99 Page:242109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Kyung Min,Kim Chi Wan,Heo Jae-Seok,Na Hyungil,Lee Jung Eun,Park Chang Bum,Bae Jong-Uk,Kim Chang-Dong,Jun Myungchul,Hwang Yong Kee,Meyers Stephen T.,Grenville Andrew,Keszler Douglas A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3665912

Reference15 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

3. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

4. Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

5. Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics

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