Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics-Reference-Cited by-同舟云学术

Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics

Published:2007-07-04 Issue:16 Volume:19 Page:4023-4029
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Meyers Stephen T.¹,Anderson Jeremy T.¹,Hong David¹,Hung Celia M.¹,Wager John F.¹,Keszler Douglas A.¹

Affiliation:

1. Department of Chemistry, Oregon State University, 153 Gilbert Hall, Corvallis, Oregon 97331-4003, and School of Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331-5501

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm0702619

Reference44 articles.

1. Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors

2. Organic thin-film electronics from vitreous solution-processed rubrene hypereutectics

3. Liquid-crystalline semiconducting polymers with high charge-carrier mobility

4. Device Physics of Solution-Processed Organic Field-Effect Transistors

5. Low-Voltage Transistor Employing a High-Mobility Spin-Coated Chalcogenide Semiconductor

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