Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities-Reference-Cited by-同舟云学术

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Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities

Published:2012-06-25 Issue:26 Volume:100 Page:263502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Liang Ling,Tao Cao Hong,Bo Chen Xiao,Min Liu Zhi,Zhuge Fei,Luo Hao,Li Jun,Cheng Lu Yi,Lu Wei

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4731271

Reference25 articles.

1. Transparent Electronics

2. Complementary Metal Oxide Semiconductor Technology With and On Paper

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

5. High-mobility Ambipolar Transistors and High-gain Inverters from a Donor-Acceptor Copolymer Semiconductor

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