A Full-Oxide CMOS Operational Amplifier Based on n-Type IGZO and p-Type SnO Thin-Film Transistors
Author:
Affiliation:
1. Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China
2. Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Royal Society
Key Research and Development Program of Shandong Province
Natural Science Foundation of Shandong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10538150/10508725.pdf?arnumber=10508725
Reference33 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
3. Metal oxide semiconductor thin-film transistors for flexible electronics
4. Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications
5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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