Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0.5Zr0.5O2 ferroelectrics by ab initio simulations
Author:
Affiliation:
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China
Funder
National Key Research and Development Program of China
Key Research and Development Program of Zhejiang, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0066169
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