Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films
Author:
Affiliation:
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
2. International Joint Innovation Center, Zhejiang University, Haining, China
Funder
National Key Research and Development Program of China
Key Research and Development Program of Zhejiang Province
“Pioneer” and “Leading Goose” Research and Development Program of Zhejiang Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10265125/10237261.pdf?arnumber=10237261
Reference21 articles.
1. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film
2. Nonequilibrium polarization dynamics in antiferroelectrics
3. Phase Relations and Volume Changes of Hafnia under High Pressure and High Temperature
4. Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories
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2. Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors;ACS Applied Electronic Materials;2024-08-15
3. Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2;Applied Physics Letters;2024-06-10
4. Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
5. Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
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