Characterization of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-silicon capacitors for nonvolatile memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2794335
Reference14 articles.
1. Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C–V measurement; Ferroelectricity in YMnO3/Y2O3/Si structure
2. A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications
3. Low-Temperature Growth and Characterization of Epitaxial YMnO3/Y2O3/Si MFIS Capacitors with Thinner Insulator Layer
4. Thirty-Day-Long Data Retention in Ferroelectric-Gate Field-Effect Transistors with HfO2Buffer Layers
5. The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure
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1. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices;ACS Applied Electronic Materials;2021-06-30
2. HfO2–Al2O3 Dielectric Layer for a Performing Metal–Ferroelectric–Insulator–Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 Thin Film;ACS Applied Electronic Materials;2020-08-12
3. Study of the origin of ferroic properties using crystal and electronic structures in BiFeO3-based compositions;Ferroelectrics;2018-10-26
4. Low-voltage-driven Pt/BiFeO3/DyScO3/p-Si-based metal–ferroelectric–insulator–semiconductor device for non-volatile memory;Journal of Materials Science;2017-11-21
5. Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric;Japanese Journal of Applied Physics;2016-03-08
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