Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices-Reference-Cited by-同舟云学术

Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices

Author:

Khosla Robin¹²,Sharma Satinder K.³^ORCID

Affiliation:

1. Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569, Germany

2. Department of Electronics and Communications Engineering, National Institute of Technology (NIT), Silchar, Assam 788010, India

3. School of Computing and Electrical Engineering, Indian Institute of Technology (IIT) - Mandi, Mandi, Himachal Pradesh, 175075, India

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

Reference331 articles.

2. McCallum, J. C. Historical Cost of Computer Memory and Storage, 2017; https://hblok.net/blog/storage/.

5. International Technology Roadmap for Semiconductors, www.itrs2.net.

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