The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure-Reference-Cited by-同舟云学术

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The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure

Published:2001-06 Issue:1-2 Volume:388 Page:226-230
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Choi Hoon Sang,Kim Eun Hong,Choi In-Hoon,Kim Yong Tae,Choi Jae Hyoung,Lee Jeong Yong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Integration of ferroelectric thin films into nonvolatile memories

2. Fatigue-free ferroelectric capacitors with platinum electrodes

3. Switching kinetics of lead zirconate titanate submicron thin‐film memories

4. Crystalline Quality and Electrical Properties ofPbZrxTi1-xO3Thin Films Prepared onSrTiO3-Covered Si Substrates

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1. Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‑volatile capacitive memory application;Journal of Materials Science: Materials in Electronics;2024-05

2. Improvement in non-volatile ferroelectric storage properties of metal-ferroelectric-insulating-silicon (MFIS) FETs using Al-LiNbO₃-HfO₂-Si structure;2022 IEEE 22nd International Conference on Nanotechnology (NANO);2022-07-04

3. Enhancing energy storage performances in an ultra-wide temperature range via interface engineering and thermal management for silicon-integrated dielectric capacitors;Applied Physics Letters;2021-12-13

4. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices;ACS Applied Electronic Materials;2021-06-30

5. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate;APPL SURF SCI;2016

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